IQE GaSb and GaN strategy pivots business toward AI and power markets amid sale options

IQE

IQE’s GaSb and GaN strategy is reshaping the UK compound semiconductor maker as it explores a potential sale of the company. The IQE GaSb and GaN strategy shifts focus toward high-value sensing, photonics and power electronics while legacy wireless markets remain under pressure. As a result, the IQE GaSb and GaN strategy now sits at the core of IQE’s turnaround and M&A narrative.

IQE has continued to rationalise its footprint while redirecting capital to growth nodes. The firm suspended manufacturing at its Silicon site in south Wales and plans to exit fully by the fourth quarter, with a new operator taking over the facility. This follows the sale of its decommissioned Bethlehem, Pennsylvania site in late 2023, with skills, IP and customers transferred to Greensboro, North Carolina. That larger US site now anchors IQE’s presence in advanced sensing, optical communications, aerospace, defence and wireless markets.

However, the restructuring runs in parallel with a strategic review that has widened from a Taiwan business sale to a possible sale of the entire company. IQE has been approached by at least one potential buyer and has received further early expressions of interest. Any acquirer would gain exposure across all four III-V platforms — GaAs, InP, GaN and GaSb — with particular upside in infrared sensing, AI data communications and GaN power electronics.

GaSb sensor momentum underpins IQE GaSb and GaN strategy

GaSb is emerging as a central pillar of the IQE GaSb and GaN strategy, especially in infrared and space imaging. IQE holds GaSb substrate manufacturing capacity in Spokane, Washington, and in Milton Keynes in the UK, creating a transatlantic supply base. The company has shipped its first commercial 6-inch GaSb epiwafers for large-area sensor products used in advanced space and satellite imaging.

These technology milestones are now backed by tangible orders. IQE secured a first-year $1.7mn purchase order for GaSb epitaxial wafers under a three-year agreement with a long-standing infrared sensing customer. It also landed a $4.1mn purchase order for antimonide substrates, with deliveries running into 2026. These sensors target industrial, aerospace and security applications, where long qualification cycles favour stable, specialist suppliers.

Meanwhile, photonics revenue remained broadly flat at £26.6mn in the first half, compared with £26.8mn a year earlier. Strong InP demand for AI-driven data communications offset delays in US military and defence infrared programmes. IQE also launched a 6-inch foundry platform for silicon photonics, positioning GaSb and InP technologies inside emerging AI and hyperscale data centre architectures.

GaN power growth, AI demand and risks to IQE GaSb and GaN strategy

On the GaN side, IQE is expanding reactor capacity for 8-inch GaN-on-silicon targeted at gesture recognition in AR and VR displays. At the same time, it is developing high-voltage (>1,000V) GaN technologies, including vertical GaN and GaN-on-sapphire, to serve automotive power electronics and radar markets. These developments reinforce how GaN power is becoming a key enabler for AI-era data centre power needs and high-efficiency conversion.

Management sees this GaN power pivot as crucial to long-term growth. Chief executive Jutta Meier highlighted the diversification into GaN power and connectivity as the right strategy, citing surging AI-related infrastructure and communications demand. IQE expects to benefit from the exit of a key GaN foundry player, which could free market share for its expanded platform. Multiple Tier 1 design wins in laser and detector products for AI and hyperscale data centres signal that the IQE GaSb and GaN strategy is already landing important customers.

Yet the investment case also carries risks. First-half group revenue fell to £45.3mn from £66mn, driven by a 52pc collapse in wireless revenue to £18.6mn. Overhang from 2024 inventory builds, tariff uncertainty and weak smartphone demand continue to weigh on handset-linked GaAs volumes. IQE expects wireless inventories to normalise only from 2026 and now guides 2025 revenue at £90-100mn, down from £118mn in 2024. The success of the IQE GaSb and GaN strategy must therefore offset a structurally weaker wireless segment and fund ongoing capacity shifts.

The Metalnomist Commentary

IQE is moving from a broad, handset-heavy portfolio toward a more focused, higher-margin mix centred on GaSb sensing, GaN power and AI photonics. That repositioning strengthens its appeal as a strategic target for buyers seeking exposure to AI infrastructure and defence-linked semiconductors. The key question is whether GaSb and GaN growth can ramp fast enough to stabilise revenues before wireless markets recover.

CETC GaN Chips Push GaN-on-Silicon RF Technology Into Commercial Scale

CETC

CETC GaN chips have reached a major commercial milestone after China Electronics Technology Group delivered more than 5mn silicon-based gallium nitride radio-frequency chips for smart terminals. The state-owned manufacturer described the product as the first commercially mass-produced GaN-on-silicon RF chip for this application.

CETC GaN chips are strategically important because GaN combines strong high-frequency and high-power performance with the cost advantages of silicon substrates. This could accelerate adoption in next-generation communications equipment where performance and scale are both critical.

CETC GaN chips are expected to support integrated space-air-ground communications networks used across 6G, commercial aerospace, low-altitude aviation and emergency communications.

The development also strengthens the long-term demand outlook for gallium. Wider GaN deployment will require more high-purity gallium and more advanced downstream processing capacity.

6G and Aerospace Expand the Market for GaN RF Chips

RF power amplifiers are critical components in modern communications systems because they influence transmission range, signal quality and data throughput.

GaN technology is well suited to these applications because it can operate efficiently at higher frequencies and power levels than conventional semiconductor materials.

That makes GaN increasingly relevant to 6G networks, satellite communications, aerospace systems, radar and low-altitude aviation platforms.

China’s rapid expansion in commercial aerospace, information communications and the low-altitude economy is creating a larger domestic market for high-performance RF chips.

Mass production is therefore as important as technical capability. Delivering more than 5mn units shows that GaN-on-silicon is moving from specialised applications toward broader commercial deployment.

This shift could lower unit costs and make GaN-based systems more practical for large-scale communications infrastructure.

Gallium Moves Deeper Into Strategic Semiconductor Supply Chains

The expansion of GaN production has direct implications for gallium demand. Semiconductor-grade GaN requires highly refined gallium with strict purity and processing standards.

As chip output rises, demand will increasingly shift from basic gallium metal toward higher-value materials suitable for epitaxy, wafers and semiconductor fabrication.

China already dominates global gallium supply and has included the metal in its dual-use export control regime since 2023.

That gives domestic GaN expansion wider strategic importance. More gallium may be consumed inside China as semiconductor demand grows, increasing pressure on overseas buyers to diversify supply.

The development also raises the value of downstream refining and processing. Future competition will depend not only on access to gallium, but on the ability to convert it into qualified semiconductor materials.

For global markets, this means gallium is becoming increasingly tied to communications, aerospace and defence technology rather than remaining a small-volume specialty metal.

The Metalnomist Commentary

CETC’s mass delivery shows that GaN is moving decisively from niche applications into commercial-scale communications. The strategic bottleneck is likely to shift upstream toward high-purity gallium and qualified semiconductor materials as 6G and aerospace demand expands.

Singapore opens GaN semiconductor facility to strengthen global supply

GaN Chip

Singapore has launched the National Semiconductor Translation and Innovation Centre for Gallium Nitride (NSTIC GaN), marking a major step in the nation’s advanced chip manufacturing ambitions. The new GaN semiconductor facility will begin commercial operations in mid-2026 and position Singapore among a handful of global hubs capable of producing GaN on SiC wafers. This Singapore GaN semiconductor facility is expected to support both domestic and international demand for high-efficiency power electronics and communication devices.

Singapore GaN semiconductor facility boosts manufacturing capacity

NSTIC (GaN) will feature production lines for 6- and 8-inch GaN on SiC wafers, offering flexibility for diverse applications. According to Minister Tan See Leng, the facility aims to support companies from start-ups to multinationals with production-grade capabilities. GaN semiconductors can operate at higher voltages, switch faster, and reduce heat, making them vital for telecoms, EV chargers, and aerospace systems. Demand for GaN chips is rising sharply, with the global RF GaN market projected to more than double to $2.7bn by 2028.

Global collaboration and market impact

The Singapore GaN semiconductor facility is a collaboration between A*Star, DSO National Laboratories, and Nanyang Technological University, backed by $123mn in funding. Partnerships include WaferLead, a SiC substrate start-up, which will leverage NSTIC GaN to enhance wafer quality and expand its global market presence. Once fully operational, the facility will offer foundry services to overcome capital barriers and accelerate new product launches. This initiative complements Singapore’s broader semiconductor push, including NSTIC (Photonics) and a $500mn advanced packaging facility announced earlier this year.

The Metalnomist Commentary

The Singapore GaN semiconductor facility reflects the strategic shift toward localized, resilient semiconductor ecosystems. By investing in GaN technology, Singapore not only reduces reliance on foreign supply chains but also positions itself as a critical hub in the global race for next-generation power electronics. The move underscores the increasing geopolitical and industrial weight of semiconductors in clean energy, EVs, and defense applications.

GaN Adoption Set to Expand in 2025: Power Integrations Leads the Way

Power Integrations

The future of gallium nitride (GaN) technology looks promising, as Power Integrations anticipates a major surge in its adoption by 2025. The U.S.-based semiconductor manufacturer expects its GaN-based products to grow significantly, not just in the smartphone charger market but across various other industries, including consumer electronics, telecommunications, data centers, and electric vehicles (EVs).

Power Integrations Growth in GaN Technology

Power Integrations predicts that by the end of this year, revenues from GaN-based products will make up over 10% of the company’s total sales. The company's expansion into GaN technology is evident, with new partnerships and contracts being signed across the globe. In India, Power Integrations has already supplied GaN products to a 5G telecom customer, replacing their previous silicon-based solutions. Additionally, metering customers in India are upgrading to GaN products, driven by the need for improved performance amidst the country's variable electricity grid voltages.

GaN's Role in the AI and EV Markets

As Power Integrations explores new opportunities for GaN, a significant focus is on the artificial intelligence (AI) sector. The company sees substantial potential in the AI data center market, with high-power GaN products gaining traction. However, there are technical challenges that need to be overcome. GaN technology, particularly for high-power applications, has been limited by design constraints when compared to silicon carbide (SiC). Nevertheless, Power Integrations is optimistic about GaN’s future, especially as it moves towards vertical GaN designs, which are expected to outperform SiC in both performance and cost.

Looking toward the electric vehicle market, Power Integrations believes that GaN could significantly reduce the cost of EV drivetrains compared to traditional silicon carbide technology. With the release of their new 1,700V GaN switch for EV chargers, the company is positioning itself as a leader in power electronics for the EV market. Balakrishnan, the CEO, emphasizes that high-power GaN technology will likely be market-ready in the next three to five years.

GaN-on-Silicon RF Chips Enter Mass Production as China Expands 6G Supply Chain

CETC

GaN-on-silicon RF chips have entered large-scale commercial production in China after state-owned China Electronics Technology Group delivered more than 5mn units for smart terminal applications. CETC described the product as the world's first commercially mass-produced GaN-on-silicon radio-frequency chip for this market.

GaN-on-silicon RF chips combine the high-frequency and high-power advantages of gallium nitride with the lower cost and manufacturing scale of silicon substrates. That combination could make the technology increasingly attractive for next-generation communications equipment.

GaN-on-silicon RF chips are expected to support high-speed connectivity across integrated space-air-ground communication networks. These systems are becoming important for 6G, commercial aerospace, low-altitude aviation and emergency communications.

The development also strengthens the long-term demand outlook for gallium. As GaN semiconductor production expands, high-purity gallium and advanced processing capacity become increasingly important parts of the electronics supply chain.

6G and Aerospace Drive Demand for High-Performance RF Chips

RF power amplifiers are critical to wireless communications because they influence transmission power, data speeds, coverage and network stability.

GaN offers advantages over conventional semiconductor materials in high-frequency and high-power applications. This makes the material well suited to communications infrastructure, radar, satellites and other demanding electronic systems.

China's 6G development, commercial aerospace sector and low-altitude economy are all expanding. These industries require more RF components capable of operating efficiently at higher frequencies and power levels.

Space-air-ground networks could become a particularly important market. These systems combine satellites, aircraft, terrestrial networks and smart terminals to provide continuous communications coverage.

Lower-cost GaN-on-silicon technology could make such systems easier to deploy at scale. Silicon substrates can also provide a more established manufacturing route than some alternative compound semiconductor platforms.

Mass production therefore matters as much as technical performance. Moving GaN technology from specialised applications into millions of commercial devices represents an important step toward broader adoption.

Gallium Moves Further Down the Semiconductor Value Chain

The expansion of GaN chip manufacturing has direct implications for gallium demand. GaN production requires highly refined gallium that meets stringent semiconductor purity requirements.

This increases the value of processing and refining capacity further upstream. Gallium supply is not only about producing primary metal but also about converting it into materials suitable for semiconductor manufacturing.

China already occupies a dominant position in global gallium supply and has placed the metal under dual-use export controls since 2023. That gives gallium growing strategic importance in both semiconductor and defence supply chains.

Greater domestic GaN production could absorb more high-purity gallium inside China, reducing the amount available for export depending on market conditions and policy.

For overseas semiconductor manufacturers, this reinforces the need to diversify gallium sourcing and processing. Demand growth from 6G, aerospace, radar and power electronics could tighten the market even without major changes in primary production.

The broader industrial trend is clear. Gallium is moving from a niche minor metal toward a strategically important input for multiple advanced technology platforms.

The Metalnomist Commentary

CETC's mass delivery shows that GaN is moving from specialised defence and telecom applications into commercial-scale electronics. The strategic bottleneck may increasingly shift upstream to high-purity gallium and qualified semiconductor materials rather than chip design alone.

Navitas Expects Surging GaN Demand in 2025 Driven by AI Data Centers and EV Markets

Navitas

Changan EV Deal and Expanding AI Infrastructure Mark Pivotal Year Ahead for Gallium Nitride Adoption

AI and EV Sectors to Fuel Gallium Nitride Growth in 2025

Navitas Semiconductor forecasts robust demand for gallium nitride (GaN) power devices in 2025, particularly in artificial intelligence (AI) data centers and electric vehicles (EVs). The U.S.-based firm reported that GaN revenue soared by over 50% in 2024, hitting record levels. Growth was led by mobile, consumer electronics, and the ramp-up of AI-based data center applications in the second half of the year.

While silicon carbide (SiC) revenues declined due to weaker demand in solar and industrial markets, GaN has proven resilient, gaining traction across high-growth sectors that prioritize energy efficiency and performance.

AI Data Centers and Global Expansion Define Strategic Growth

Navitas has seen its AI data center customer pipeline surge to over $165 million in 2024, more than doubling from $70 million in 2023. The company began sampling its 80–120V GaN fan lift devices designed for 48V DC-to-DC converters in data centers and expects significant revenue from this segment in 2025. It will pursue both SiC and GaN technologies to serve next-generation power architectures.

AI platforms such as DeepSeek are driving decentralized computing and edge AI, which are expected to require more efficient power delivery systems. Navitas anticipates this trend will accelerate adoption of its GaN and SiC components across cloud infrastructure.

EV and Solar Integration Signal Next Wave for GaN Applications

Navitas is now sampling 48V EV battery systems and expects the strongest demand growth to begin in China. The company’s GaN technology has secured its first EV production contract, set for H1 2026, targeting on-board charging systems. Notably, Changan Automobile selected Navitas GaN devices for its Qiyuan E07 platform, forecasting a 10,000km increase in range and up to 20% reduction in charging costs versus traditional silicon solutions.

In the solar sector, GaN is expected to debut commercially in mid-2025 with the launch of Navitas' new GaN-based micro-inverter. This technology promises to reduce size, weight, and cost while enhancing conversion efficiency.

Despite these industrial advances, GaN adoption in consumer electronics will remain strong. Navitas predicts GaN chargers will power over 10% of all mobile devices in 2025, with expansion into high-growth markets such as India, Latin America, the Middle East, and Africa.

InP and GaN Wafer Supply Deal Strengthens Macom’s Compound Semiconductor Chain

Macom

InP and GaN wafer supply has become a strategic priority for Macom Technology Solutions as the US semiconductor manufacturer invests in UK-based compound semiconductor wafer supplier IQE. The investment secures long-term epitaxial wafer services and strengthens Macom’s access to materials used in photonics, defence, satellites and 5G telecom systems.

Macom has committed £45mn as part of an £81mn investor package for IQE. The financing includes £23mn of reinvestment from convertible loans and will allow IQE to repay debt while funding core technologies such as indium phosphide and gallium nitride.

InP and GaN wafer supply is increasingly important because both materials sit at the centre of high-performance semiconductor applications. Indium phosphide supports optical transmission and silicon photonics, while gallium nitride enables high-frequency, high-power radio frequency and defence electronics.

The investment also allows IQE to end its strategic review. The company had considered selling or spinning out operations in Taiwan and later examined a possible full sale of the business. Those discussions have now been terminated.

Macom Secures Materials for Photonics and Data Centres

Macom said it will sign long-term supply agreements with IQE across multiple epitaxial technologies. These agreements will support scalable, high-volume manufacturing and strengthen supply-chain resilience.

This matters because AI data centres are driving rapid growth in optical transmission technologies. As computing loads rise, data centres need faster and more energy-efficient data movement between chips, servers and racks.

Indium phosphide is a critical material for lasers and photonic components used in optical networks. It has become a key bottleneck as demand from AI infrastructure, cloud computing and high-speed communications accelerates.

Macom’s strategy includes expanding laser and silicon photonic-based optical transmission products. Long-term InP and GaN wafer supply from IQE gives the company more confidence as it scales these technologies.

IQE also benefits from the arrangement. The funding improves its balance sheet and gives the wafer supplier stronger customer visibility from an existing key customer.

For the compound semiconductor industry, the deal shows how customers are moving closer to upstream wafer suppliers. Securing epitaxial capacity is becoming as important as chip design when materials availability is tight.

GaN Demand Links Defence, Satellites and 5G

Gallium nitride is another core part of Macom’s growth strategy. GaN is used in radio frequency sensors, amplifiers and other components for defence, satellite and 5G telecom systems.

These applications require materials that can handle high power, high frequency and demanding operating conditions. GaN offers performance advantages over conventional silicon in several advanced RF and power applications.

Macom is also developing advanced GaN-on-silicon processes and installing new equipment to modernise and expand manufacturing capabilities. This points to a broader push to scale production while improving cost and process efficiency.

IQE’s manufacturing footprint gives the partnership wider supply-chain relevance. The company operates two sites in south Wales, a facility in Milton Keynes, four plants in the US and operations in Taiwan.

IQE expects revenue to grow by more than 20% in 2026. The company cited strong demand from AI and data-centre photonics, laser and wireless products for smartphones, and continued strength in aerospace and defence.

The transaction also gives Macom a governance role, as the company will join IQE’s board. This deepens the relationship from customer-supplier contracting into strategic influence.

InP and GaN wafer supply will remain critical as semiconductor demand becomes more materials-intensive. Data centres, defence electronics, satellites and telecom infrastructure all need reliable compound semiconductor capacity.

The Metalnomist Commentary

Macom’s investment in IQE shows that semiconductor supply security is moving upstream into compound wafer materials. As AI data centres and defence RF systems expand, control over InP and GaN capacity will become a strategic advantage, not just a procurement issue.

Collins Aerospace Radar Production Expansion Strengthens US GaN Defense Electronics

Collins Aerospace

Collins Aerospace radar production is set to expand in Largo, Florida, as the aerospace and defense supplier invests in higher output for commercial aviation radar and multi-domain security solutions. The company plans to spend $26.5mn on the facility expansion.

Collins Aerospace radar production growth follows a $438mn contract awarded by the Federal Aviation Administration in January. The contract supports the FAA’s radar system replacement programme and gives Collins a major role in modernising US aviation surveillance infrastructure.

Collins Aerospace radar production will include Condor Mk3 and ASR-XM radar systems. These products use gallium nitride technology, making the expansion strategically relevant to compound semiconductors, defense electronics and high-performance radar supply chains.

The Largo facility already produces radars, satellite components and secure communications components. Full expansion operations are expected to begin by late 2026.

GaN Technology Raises Radar Performance and Materials Importance

Gallium nitride is becoming more important in radar and power electronics because it can outperform conventional silicon and gallium arsenide in demanding applications. GaN supports higher efficiency, higher voltage operation, faster switching and stronger high-temperature performance.

These characteristics are critical for aviation radar. Modern radar systems need higher power density, reliability and precision while operating in harsh conditions.

The Condor Mk3 and ASR-XM programmes therefore represent more than an equipment upgrade. They show how advanced semiconductor materials are becoming central to aerospace and defense capability.

GaN-based radar systems also strengthen the strategic value of compound semiconductor supply chains. As defense, aviation, satellite and communications systems become more electronics-intensive, access to qualified GaN materials and manufacturing capacity becomes a national security issue.

For Collins Aerospace, expanding Largo’s production capability improves its ability to support both civil aviation infrastructure and broader security markets.

FAA Radar Replacement Supports Domestic Manufacturing Capacity

The FAA radar replacement programme gives Collins a clear demand anchor for the Largo expansion. Long-term government contracts can support capital investment, workforce planning and equipment upgrades.

This matters because aerospace and defense electronics require qualified production environments, secure supply chains and strict reliability standards. Capacity cannot be added quickly without investment in specialised facilities and skilled labour.

The Largo site’s existing radar, satellite and secure communications work gives Collins an established base for expansion. The new investment should deepen that capability while supporting US domestic manufacturing.

The project also fits the broader reshoring trend in advanced electronics. Governments and major contractors are prioritising local production for systems tied to aviation safety, national defense and critical infrastructure.

For materials suppliers, the key signal is demand growth for GaN-related inputs and processing capability. Radar, satellite communications, power electronics and secure systems are likely to remain important demand channels for compound semiconductor materials.

The Metalnomist Commentary

Collins Aerospace’s expansion shows that GaN is moving deeper into critical aviation and defense infrastructure. The strategic bottleneck will not only be radar assembly, but reliable access to qualified compound semiconductor materials and manufacturing capacity.

India Semiconductor Mission Adds GaN Micro-LED and Power Chip Projects

India, Semiconductor

India Semiconductor Mission has approved two additional semiconductor manufacturing projects in Gujarat, strengthening India’s push into compound semiconductors, advanced displays and power electronics. The new projects represent combined investment of about 39.36bn rupees.

India Semiconductor Mission support now includes the country’s first commercial mini/micro-LED display facility based on gallium nitride technology. This moves India beyond conventional chip assembly and into higher-value compound semiconductor manufacturing.

India Semiconductor Mission approvals have now reached 12 projects, with cumulative planned investment of about Rs1.64 trillion. The programme is becoming a central tool for reducing import dependence and building domestic semiconductor capability.

The two new projects will be developed by Crystal Matrix and Suchi Semicon. Their focus areas differ, but both support India’s broader objective of building a more complete electronics and semiconductor value chain.

GaN Micro-LED Facility Moves India Into Compound Semiconductors

Hyderabad-based Crystal Matrix will build an integrated compound semiconductor fabrication and assembly, testing, marking and packaging facility at Dholera. The plant will produce mini/micro-LED display modules and provide GaN foundry services.

The project will include epitaxy on 6-inch wafers, which is strategically important. Epitaxy is a core upstream process for compound semiconductor devices and can determine performance, yield and scalability.

The facility’s planned capacity is 72,000 m²/yr of mini/micro-LED display panels. These products can serve large-format televisions and signage, medium-sized screens for tablets, smartphones and vehicles, and micro-displays for smart glasses, smartwatches and extended-reality devices.

Gallium nitride gives the project industrial significance beyond display manufacturing. GaN is a critical material for high-brightness LEDs, power electronics, radio-frequency systems and advanced optoelectronics.

The Dholera project therefore adds a materials dimension to India’s semiconductor strategy. It links chip manufacturing policy with gallium-based compound semiconductor supply chains, where China, Taiwan, Japan, the US and Europe remain important competitors.

Power Semiconductor Assembly Supports Automotive and Industrial Demand

Suchi Semicon will establish an outsourced semiconductor assembly and test plant in Surat. The facility will focus on discrete semiconductor manufacturing for power electronics, analogue integrated circuits and industrial systems.

The planned capacity is 1.03bn chips/yr. This scale matters because India’s automotive, industrial automation and consumer electronics sectors need reliable domestic access to power and analogue components.

Power electronics are becoming more important as electrification spreads across vehicles, factories, appliances, renewable energy systems and charging infrastructure. Even basic discrete devices can become supply-chain bottlenecks when manufacturing is concentrated overseas.

The approval also strengthens Gujarat’s role as a semiconductor manufacturing hub. Dholera and Surat now join a growing cluster of projects intended to support fabrication, packaging, testing and electronics manufacturing.

Of the 10 projects approved earlier under the programme, two have started commercial shipments and two more are expected to begin operations soon. The government has also approved 104 start-ups to expand domestic chip design capability.

That combination is important. Manufacturing capacity alone is not enough. India also needs design companies, materials suppliers, equipment support, packaging capability and customers willing to qualify domestic semiconductor products.

The latest approvals show that India is trying to build depth across the value chain. GaN micro-LED fabrication brings advanced materials capability, while Suchi’s assembly and test plant supports volume supply for industrial and automotive electronics.

The Metalnomist Commentary

India’s semiconductor strategy is becoming more materials-driven, with GaN now entering the centre of its manufacturing push. The real test will be whether India can connect fabrication, epitaxy, packaging and design into a reliable domestic supply chain rather than isolated projects.

GlobalFoundries Partners with Finwave to Advance GaN-on-Si Technology for Mobile Devices

Cutting-edge collaboration aims for mass production by 2026

US-based Finwave Semiconductor has secured a deal with GlobalFoundries (GF) to scale its gallium nitride (GaN)-on-silicon (Si) technology for mobile phone power amplifiers. The partnership targets large-scale manufacturing of Finwave’s high-electron mobility transistors (MISHEMTs) at GF's 200mm facility in Burlington, Vermont, with an eye on mass production by early 2026. This collaboration merges Finwave's advanced GaN-on-Si tech with GF’s US-based manufacturing and RF silicon platforms.

GaN-based MISHEMTs outperform CMOS and gallium arsenide (GaAs) devices in power output and energy efficiency, making them ideal for 5G and future 6G applications. The technology promises significant improvements in power density and efficiency for power amplifiers, essential for new high-frequency 5G bands, 6G, and Wi-Fi 7 systems.

GF is also advancing its own 650V GaN products and will soon introduce 100-200V variants. The company plans to modernize its Burlington facility and expand capacity, aided by a US Chips and Science Act grant aimed at boosting domestic semiconductor production. GF's recent acquisition of Tagore Technology’s power GaN IP portfolio underlines its commitment to high-volume manufacturing of power technologies in the US.

Anticipating a rebound in smart mobile device sales in 2024, GF’s CEO Thomas Caulfield highlighted AI-enabled devices as a catalyst for increased demand in efficient power semiconductors, starting in Q4 2024.

AI Growth Boosts Electronics Metal Demand, But Broader Semiconductor Market Faces Weak Recovery

AI

The explosive growth of Artificial Intelligence (AI) is undoubtedly driving demand for specific electronic metals, but the broader electronics market, particularly the semiconductor sector, is struggling with a slower-than-expected recovery. As we approach 2025, the demand outlook remains mixed, despite AI's role in pushing innovation and technological expansion.

AI Fuels Electronics Demand

This year, AI technologies, especially AI-powered chatbots and smartphones, gained widespread traction. Companies like Apple and Samsung have been rolling out their own AI systems, with Apple’s “Apple Intelligence” software joining Samsung’s Galaxy AI. At the same time, OpenAI's ChatGPT reached 200 million active weekly users, doubling from the previous year. These developments indicate the mainstreaming of AI tools in everyday life.

The continued growth of AI will be supported by the physical expansion of data centres and the increased demand for hardware capable of handling AI's vast data processing needs. This translates into higher demand for specialty materials that make up critical electronic components. As data centres require more energy-efficient solutions to process increasing data volumes, materials like gallium nitride (GaN) and indium phosphide (InP) will play a central role.

Gallium Nitride (GaN) and Indium Phosphide (InP) Boosted by AI Expansion

As AI technologies scale, the energy demands of data centres will rise significantly. According to research from Goldman Sachs, the data centre expansion needed to support AI could increase electricity consumption by up to 160% by 2030. This will likely spur greater demand for GaN-based power electronics, which are more energy-efficient than traditional silicon electronics. GaN-based devices generate less heat and can operate at higher temperatures, making them ideal for data centres where cooling accounts for up to 40% of energy consumption.

Another compound semiconductor, indium phosphide (InP), is expected to gain traction as well. InP is already used in data and telecom transceivers and is poised to play a key role in the future of 6G wireless and satellite communications networks. InP-based photonic integrated circuits enable faster, more energy-efficient data transfers, making them essential for the high-speed data transfers required by AI clusters in data centres. This has garnered attention from the U.S. government, with the CHIPS Act supporting multiple InP-related projects this year.

Wider Electronics Demand Faces Challenges

Despite the promising outlook for AI-driven growth in specific sectors, the broader semiconductor market is still grappling with weaker-than-expected recovery. Materion, a U.S.-based producer of specialty materials for electronics, reported slower-than-expected semiconductor recovery in its third-quarter results. The company, which manufactures materials for chip manufacturing, including tantalum sputtering targets and antimony chemicals, noted that while there is strong demand for high-performance chips used in computing, the market for 2025 remains uncertain.

The situation was mirrored by ASML, a major chip equipment manufacturer, which lowered its revenue forecast for 2025 from €30-40 billion to €30-35 billion. ASML highlighted that semiconductor manufacturers are curbing capacity expansions due to the ongoing weakness in chip demand recovery.

Semiconductor Shipments and Market Outlook

The global semiconductor industry witnessed a peak in silicon wafer shipments in 2022, driven by supply shortages and high demand for consumer electronics during the pandemic. However, shipments of silicon wafers—a key indicator of chip production—are expected to drop from 14,565 million square inches (MSI) in 2022 to 12,174 MSI in 2024. Although global silicon wafer shipments are projected to rise to 13,328 MSI in 2025, the recovery expected in 2024 has largely failed to materialize, indicating continued challenges in the broader electronics market.

Conclusion

The demand for electronic metals, particularly those used in AI and data centre technologies, is on the rise. However, the semiconductor sector as a whole is still experiencing a slow recovery, with uncertainty surrounding the broader electronics market heading into 2025. While AI's growth continues to offer opportunities for companies involved in the production of GaN and InP-based components, the overall demand picture for electronics remains mixed, with slower-than-expected recovery from the pandemic-induced boom.

IQE InP Capacity Positions UK Wafer Producer for AI Data Centre Demand

IQE

IQE InP capacity gives the UK compound semiconductor wafer producer a stronger position as artificial intelligence infrastructure drives demand for faster optical data transmission. The company says it has enough capacity to ramp output for AI infrastructure, aerospace and defence, and wireless markets in 2026.

IQE InP capacity is becoming more strategically important because indium phosphide supports high-speed photonic products used in data centres. These systems need faster, lower-latency connectivity as AI workloads increase.

IQE InP capacity could also be expanded by converting some gallium arsenide capacity if customer commitments support the move. That flexibility gives IQE a way to respond to demand without large immediate capital spending.

The company expects 2026 revenue to grow by more than 20%, supported by strong demand across core segments and a sharper recovery in photonics.

InP and GaN Demand Strengthens With AI Infrastructure

Indium phosphide demand is rising because AI data centres require ultra-fast optical and wireless communications. High-performance photonics are becoming essential as data movement becomes a bottleneck in AI infrastructure.

IQE produces InP, gallium nitride, gallium arsenide and gallium antimonide wafer products and material systems. The company sees the strongest opportunities in InP and GaN.

The AI buildout helped turn IQE’s business around in the second half of last year. First-half revenue had been pressured by tariff uncertainty, weakness in wireless handsets, customer inventory builds and delays in military and defence funding.

Photonics revenue rose by 15% to £57.1mn in 2025, supported by AI, data centres and the release of funding for some US military and defence programmes.

GaN is also gaining relevance. Demand for GaN power semiconductors is being driven by data centres, aerospace, defence and space applications, where efficiency, power density and heat resistance are critical.

GaAs remains relevant in wireless and sensing markets. IQE’s message is that InP may be leading the current growth cycle, but it sits inside a broader compound semiconductor materials platform.

Supply Security and Customer Commitments Will Decide Expansion

IQE’s capacity position improved after US chipmaker Macom invested in the company last month. The investment allowed IQE to avoid a sale process and retain manufacturing sites in the UK, US and Taiwan.

Each site has its own technology focus and capacity to scale production without major new capital expenditure. But any expansion must be supported by customer engagements, commitments or financing.

That condition matters because compound semiconductor supply chains require long qualification cycles. Customers need reliable wafer quality, secure supply, technical consistency and predictable production before committing to larger volumes.

IQE is also working with suppliers to reduce exposure to shortages in InP materials. The company is looking to dual-source or expand sourcing capabilities so it does not depend on a single supplier.

This highlights a wider materials issue. AI infrastructure is increasing demand not only for chips, but also for specialised semiconductor materials such as indium, gallium, phosphorus and antimony-based systems.

For IQE, the opportunity is clear. If AI, defence and wireless demand remain strong, the company can use its existing asset base to scale higher-value wafer production.

The challenge is execution. IQE must secure firm customer commitments, manage raw material sourcing and convert technical capacity into qualified volume growth.

The Metalnomist Commentary

IQE’s outlook shows that AI infrastructure is pulling compound semiconductors deeper into strategic supply-chain planning. The next bottleneck may not only be chip design, but access to qualified InP, GaN and GaAs wafer capacity.

LEO Semiconductor Demand Rises as US-China Space Race Accelerates

LEO chip

LEO semiconductor demand is accelerating as low earth orbit satellite deployment expands and the US-China space technology race intensifies. Greater satellite density is increasing the semiconductor content required for communications, sensing, computing and power management.

LEO semiconductor demand is also creating new opportunities for advanced materials including gallium nitride, silicon germanium and indium phosphide. These materials support high-frequency communications, radio-frequency power, photonics and other functions where conventional silicon can face performance limits.

LEO semiconductor demand is moving beyond traditional government space programmes as private capital enters satellite broadband, direct device connectivity and potential orbital data centres. The shift is increasing launch frequency and expanding the commercial market for space-qualified electronics.

The development has strategic implications for gallium and indium supply chains. Higher deployment of GaN and InP devices could increase demand for high-purity materials already considered strategically sensitive.

GaN and InP Gain From Higher Satellite Semiconductor Intensity

Modern LEO constellations require increasingly sophisticated radio-frequency chips, optical communications devices, sensors and power electronics.

GaN is particularly important for RF power amplifiers because it performs efficiently at high frequencies and power levels. This makes it suitable for satellite communications, phased-array antennas and future 6G networks integrating space, air and ground infrastructure.

China is building more domestic capability across this value chain as US technology controls increase pressure for semiconductor self-sufficiency.

CETC-linked companies are already supplying advanced components for Chinese spacecraft and communications systems. Recent mass production of millions of GaN RF chips indicates that China is moving some advanced compound semiconductor technology from specialised programmes toward higher-volume deployment.

Indium phosphide could benefit from another part of the satellite market. InP is important for high-speed optical communications and photonic systems, which could become increasingly valuable as satellite networks move larger volumes of data.

Silicon germanium also offers advantages in high-frequency and radiation-sensitive electronics, adding another specialty materials route into the expanding space semiconductor market.

The result is a broader materials opportunity. Satellite growth is no longer only about aluminium structures, titanium components and propulsion materials; semiconductor-grade gallium, indium and germanium are becoming increasingly important.

Orbital Manufacturing Could Open a New Semiconductor Investment Cycle

The US is also considering greater policy support for semiconductor manufacturing in space. Proposed legislation would clarify that semiconductor manufacturing in LEO can qualify for incentives under the CHIPS and Science Act.

The objective reflects growing concern that China could gain an early advantage in orbital manufacturing.

Microgravity manufacturing is attracting interest because some semiconductor materials could potentially be produced with fewer defects and improved uniformity compared with terrestrial processes.

Private companies are accelerating that development. SpaceX, Blue Origin, Google and specialist manufacturers are exploring concepts ranging from orbital data centres to in-space semiconductor production.

The economic model of the space industry is also changing. Commercial investment now represents a much larger share of total space spending than government budgets, increasing the pace at which new technologies can move from development into deployment.

Reusable rockets, lighter satellites and higher-volume manufacturing have reduced the cost of deploying large constellations. Advanced antennas and semiconductor systems originally developed for military applications are also moving into commercial markets.

For metals and materials suppliers, this creates another high-growth demand channel. Aerospace-grade titanium and nickel alloys remain important, but the next phase of the space economy will increasingly depend on advanced semiconductor materials and high-purity minor metals.

The Metalnomist Commentary

The LEO race is becoming a materials race as much as a satellite race. Gallium, indium and germanium could gain strategic value as communications, computing and semiconductor manufacturing move increasingly into orbit.

STMicro targets new sources of silicon chip demand

STMicro

STMicro is betting on new sources of silicon chip demand from AI data centres and advanced EV platforms. The company sees silicon and silicon carbide (SiC) devices as core growth engines, even as it trims some near-term capital spending. As a result, STMicro is repositioning its portfolio toward photonics, high-voltage power electronics and next-generation vehicle systems that can unlock new sources of silicon chip demand across several end markets.

Photonics and AI servers anchor new sources of silicon chip demand

STMicro is using silicon photonics to capture new sources of silicon chip demand from hyperscale AI data centres. In the third quarter, the firm reported rising orders for silicon photonics integrated circuit prototypes from its 300mm fabs. This confirms internal expectations that photonics ICs will become a meaningful revenue driver as AI server build-outs accelerate worldwide.

Meanwhile, the company is tightening its integration into the AI infrastructure ecosystem through the Starlight Consortium. The consortium connects substrate suppliers, device makers and system integrators to develop high-speed optical solutions for data centres, telecoms and automotive. In parallel, STMicro is collaborating with Nvidia on an 800V DC AI data centre architecture that combines SiC, gallium nitride (GaN) and silicon technologies. The firm has also demonstrated a GaN prototype with over 98pc conversion efficiency, underscoring how power density and efficiency now drive silicon chip demand as much as raw compute.

SiC, EV power electronics and a more selective capex strategy

STMicro is broadening SiC usage beyond traction inverters and onboard chargers to new power roles in active suspension inverters. This expands the addressable market in EVs just as advanced driver-assistance systems increase demand for sensors and control chips. However, weaker-than-expected EV programmes in Europe and China have delayed the full impact, forcing the company’s main automotive customer to cut orders.

Therefore STMicro is trimming near-term SiC capex as it transitions production from 150mm to 200mm wafers. The company will slow some investments in SiC conversion while maintaining its 300mm expansion plans in Agrate, Italy, and Crolles, France. These fabs continue to see solid order visibility, particularly for data-centre power modules and optical components. STMicro expects EV growth and SiC restocking to resume in 2026, once inventory drawdowns run their course and regional electrification policies translate into firmer demand.

The Metalnomist Commentary

STMicro’s push into photonics and SiC power devices shows how new sources of silicon chip demand are shifting toward AI infrastructure and complex EV systems. For the wider materials chain, this means sustained pull for high-purity silicon, SiC substrates and GaN epitaxy, even if near-term EV softness delays some projects. Suppliers that align with 300mm and 200mm wafer roadmaps and can support AI-class power densities will be best positioned as these new demand waves crystallise from 2026 onward.

US Semiconductor Manufacturers Expand with CHIPS Act Funding

US Chip

The US Department of Commerce has allocated CHIPS Act funding to boost domestic semiconductor production. Companies Analog Devices, Coherent, IntelliEPI, and Macom will use this funding to increase manufacturing capacity, modernize facilities, and enhance the US semiconductor supply chain.

Investments in Key Semiconductor Companies

On January 16, the Department of Commerce announced preliminary funding agreements for four semiconductor manufacturers:

• Analog Devices will receive up to $105 million to expand mature node semiconductor manufacturing at its Oregon and Washington facilities. The investment will boost capacity by 70%, focusing on 180nm and 350nm process nodes. It will also expand module production at its Massachusetts facility for commercial, space, and defense applications.

• Coherent will receive up to $79 million to increase 150mm and 200mm silicon carbide (SiC) wafer production at its Easton, Pennsylvania facility. The expansion will add 750,000 substrates per year and double epitaxial wafer output, supporting energy and military applications.

• IntelliEPI will use $10.3 million to modernize its Allen, Texas facility, which produces epitaxy materials for indium phosphide, gallium arsenide (GaAs), gallium antimonide, and gallium nitride (GaN) wafers. These materials are essential for defense, AI, data centers, telecommunications, and automotive industries.

• Macom has announced a $345 million investment over five years, supported by up to $180 million in CHIPS Act funding, federal tax credits, and state funding. The company will modernize its Massachusetts and North Carolina wafer fabrication plants. Its Massachusetts facility will upgrade 100mm production lines for GaAs, GaN, and silicon materials and install 150mm GaN-on-SiC manufacturing. In North Carolina, Macom will develop 150mm wafer production and expand metal-organic chemical vapor deposition (MOCVD) epitaxial growth.

Strengthening the US Semiconductor Supply Chain

The CHIPS Act investments will expand domestic semiconductor production, ensuring a more resilient supply chain for key industries such as automotive, defense, telecommunications, and AI. These companies will also benefit from the Advanced Manufacturing Investment Tax Credit, which covers 25% of qualified capital expenditures.

By scaling up domestic semiconductor manufacturing, the US aims to reduce dependence on foreign suppliers and strengthen its position in advanced technology sectors.

US Expands Semiconductor Investments with India Partnership

India Chip

The US government continues to ramp up investments in semiconductor manufacturing both domestically and internationally, with a significant focus on partnerships with allied nations. This week, a major agreement was reached between the US and Indian governments to establish a new semiconductor plant in Kolkata, India. The facility will focus on producing advanced semiconductors, including infrared, gallium nitride (GaN), and silicon carbide (SiC), to support sectors such as national security, next-gen telecommunications, and clean energy.

Strengthening Tech Ties: US-India Collaborations

This venture is a part of a broader collaboration supported by the US Space Force, Bharat Semi, 3rdiTech, and the India Semiconductor Mission. The mission, initiated by India's electronics and IT ministry (MIIT), aims to build a robust semiconductor supply chain, supported by the US Department of Commerce’s International Technology Security and Innovation (ITSI) Fund. The fund itself is a key initiative under the CHIPS and Science Act, designed to bolster US semiconductor production.

In addition to the plant in Kolkata, US-based Analog Devices has also signed a partnership with India's Tata Electronics. Their collaboration focuses on chip production at Tata's planned $11bn manufacturing plant in Gujarat, with a potential $3bn facility for chip assembly and testing in Assam. Furthermore, US manufacturer GlobalFoundries, after acquiring Tagore Technology’s power GaN IP, announced plans to develop a Kolkata Power Centre for GaN technology.

On the domestic front, the US Commerce Department recently awarded Polar Semiconductor up to $123mn to expand its silicon wafer manufacturing in Bloomington, Minnesota. This marks the first allocation under the CHIPS Act for commercial chip production, which has sparked over $400bn in private semiconductor investments and more than $35bn across 16 states.

Australia's MTM Plans US Gallium Recycling Plant

Australian mining firm MTM Critical Metals is set to establish a new gallium recycling plant in the United States, with operations slated to begin next year. The plant will process 1 ton per day of gallium, extracted from electronic waste such as semiconductors and LEDs, using their proprietary Flash Joule Heating (FJH) technology.

Innovative Process and Market Impact

The FJH technology, tested at Rice University in Texas, has proven effective in recovering gallium from LED manufacturing waste. This process involves rapidly heating the waste in a controlled chlorine atmosphere, which enables the extraction of gallium in high purity by converting gallium nitride (GaN) into a more volatile form.

The global gallium market faces supply challenges due to China's export restrictions, which affect over 95% of global production and have led to rising prices. Gallium is increasingly in demand for applications including semiconductors, LEDs, solar panels, and advanced defense systems.

MTM is advancing prototype testing in Houston and is exploring partnerships for financing and offtake agreements. The technology could also be used to recover germanium, another metal with restricted exports from China. MTM's broader research includes testing on various metals and rare earth elements.

US gallium production: DOE’s $6mn TRACE-Ga to secure critical supply

Energywerx

US gallium production gets a targeted boost under DOE’s new TRACE-Ga program. The initiative funds pilot plants that deliver 1 t/yr of 99.99% gallium. As a result, US gallium production could finally reduce import risk and price shocks.

What TRACE-Ga funds and requires

The program backs recovery from Bayer liquor and zinc residues at industrial scale. Awardees must pass a 14-day trial and produce 50 kg at 4N purity. Energywerx will manage the process and validate performance data. Meanwhile, submissions close on 20 November, with selections in late 2025. Therefore, early movers can lock in engineering momentum and offtake interest.

Why US gallium production matters now

China controls nearly all primary gallium output and restricted US exports. That constraint exposed defense, power electronics, LED, and solar supply chains. The USGS now tags gallium risk as high on its draft 2025 list. Consequently, US gallium production from residues can harden domestic MRO and chip back-ends. The goal is reliable GaN and GaAs inputs at competitive cost.

Developers should prioritize impurity control, reagent recycling, and modular plant design. In addition, multi-feed flexibility can expand sourcing from alumina and zinc circuits. If pilots scale, capital could flow into bankable commercial units by 2026. That path would anchor US gallium production near downstream device manufacturing.

The Metalnomist Commentary

TRACE-Ga is pragmatic policy aimed at mid-TRL bottlenecks, not labs. Watch purity, operating cost per kilogram, and secured offtake; those metrics will decide who scales.

Chinese EV LiDAR Chip Demand Surges on ADAS Race

EV LiDAR

Chinese EV LiDAR chip demand is accelerating as ADAS becomes a mainstream differentiator in China. Chinese EV LiDAR chip demand expanded with EVs exceeding half of new sales in 1H25. Therefore, Chinese EV LiDAR chip demand will keep rising as LiDAR extends beyond premium models. LiDAR, radar, and cameras now scale across mid-range vehicles. Premium 1,550nm systems lift semiconductor intensity per car. Meanwhile, 905nm GaAs units remain cost leaders for mass ADAS.

Materials Impact: Gallium, Indium, Germanium and InP

LiDAR growth raises near-term gallium needs through 905nm GaAs emitters. However, 1,550nm adoption pulls indium and phosphide demand via InGaAs and InP lasers. Germanium also gains in SiGe receivers and select SWIR optics. Silver telluride could appear in photodetectors, from a low base. As a result, upstream pricing power may shift to high-purity minor metals and epitaxial wafers. Apparent adoption reached 17% of Chinese EVs by June. Unit growth will compound material consumption through 2026.

Supply Chain and Capacity Ramp Inside China

RoboSense surpassed one million automotive LiDAR units by June. Hesai installed new lines and targets two million units a year by end-2025. The firm won designs on 20 models for 2026 launches. BYD will deploy God’s Eye ADAS across all new models. Two variants include LiDAR for wider feature access. Pony AI’s seventh-generation Robotaxi uses four Hesai AT128 sensors per car. Each unit integrates 128 VCSELs, using InP, GaAs, or GaN. GlobalFoundries reports 36% automotive growth and pursues “China for China.” That strategy supports local ADAS, laser drivers, and radar SoCs.

The Metalnomist Commentary

LiDAR’s shift from flagship to mainstream rewrites the automotive semiconductor bill. Watch 1,550nm penetration; it will set the slope for InP and InGaAs demand. Export permits and wafer capacity could become the hidden bottlenecks in 2026.

Taiwan’s TSMC Reports Robust Q3 Revenue Growth Driven by AI and Smartphone Demand

TSMC

Taiwan Semiconductor Manufacturing Company (TSMC) reported a stellar third-quarter performance for 2024, as surging demand for artificial intelligence (AI) chips and smartphones propelled its revenue to $23.5 billion. This represents a 13% quarter-on-quarter growth from $20.8 billion and an impressive 36% increase year-on-year from $17.3 billion. The company's results exceeded its prior guidance of $22.4-$23.2 billion, solidifying its position as a key player in the semiconductor industry.

Advanced Technologies Drive Growth

Demand for TSMC’s cutting-edge technologies underpinned this growth. The company's 3-nanometer (3nm) process technology contributed 20% of Q3 revenues, up from 15% in Q2. Although the contribution from the 5nm process fell slightly to 32% from 35%, the steady performance of 7nm wafers, which accounted for 17% of revenues, indicates consistent demand for mature nodes.

High-performance computing (HPC) remained the largest revenue driver, comprising 51% of total revenue, while smartphones accounted for 34%. The Internet of Things (IoT) contributed 7%, and the automotive sector added 5%.

AI and Smartphones Lead Market Momentum

The rollout of AI applications and the launch of new flagship smartphones, including Apple's iPhone 16, were significant catalysts. According to data from the International Data Corporation (IDC), global mobile phone shipments rose 4% year-on-year in Q3, reaching 316 million units. Growth in Chinese smartphone brands, such as Huawei and Xiaomi, further bolstered this trend.

Future Outlook and Materials Innovation

TSMC projects its Q4 revenue to climb to $26.1-$26.9 billion, driven by sustained demand for AI and smartphones. AI advancements are expected to spur the adoption of compound semiconductors like gallium nitride (GaN) and gallium arsenide (GaAs), materials that are more energy-efficient than traditional silicon. These innovations could redefine energy efficiency standards in semiconductor manufacturing.

TSMC's strong third-quarter performance highlights its dominance in the global semiconductor market and its ability to meet evolving technological demands, reinforcing its role as a critical supplier for the AI and mobile computing revolutions.